Session
[A13-A14] 전자/반도체 재료 III
Oral,
G발표회장(스톤홀3),
10:10 ~ 11:10
Chair: 정대용(인하대)
A-13
오전 10:40:00
Study on Etch Characteristics of Magnetic Tunnel Junction (MTJ) Materials using Reactive Ion Beam Etching (RIBE) for MRAM devices